PART |
Description |
Maker |
MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
QM50DY-2HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
QM30TB-2HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30TF-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM15TB-2H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM15TB-2HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50TB-24B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM100HY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50E3Y-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|